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| AOP610 Complementary Enhancement Mode Field Effect Transistor General Description The AOP610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses. It is ESD protected. Standard product AOP610 is Pb-free (meets ROHS & Sony 259 specifications). AOP610L is a Green Product ordering option. AOP610 and AOP610L are electrically identical. Features n-channel p-channel VDS (V) = 30V -30V -6.2A (V GS=10V) ID = 7.7A (VGS=10V) RDS(ON) RDS(ON) < 24m (VGS=10V) < 37m (VGS = -10V) < 42m (VGS=4.5V) < 60m (VGS = -4.5V) ESD rating: 1500V (HBM) PDIP-8 S2/A G2 S1 G1 1 2 3 4 8 7 6 5 D2/K D2/K D1 D1 D2 D1 K2 G1 A2 N-ch P-ch G2 S2 S1 n-channel Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage 20 Continuous Drain Current A Pulsed Drain Current Power Dissipation Avalanche Current B B p-channel Max p-channel -30 20 -6.2 -4.9 -30 2.3 1.45 20 20 -55 to 150 W A mJ C A Units V V TA=25C TA=70C TA=25C TA=70C B 7.7 ID IDM PD IAR EAR TJ, TSTG 6.1 30 2.3 1.45 15 11 -55 to 150 Repetitive avalanche energy 0.1mH Junction and Storage Temperature Range Thermal Characteristics: n-channel+schottky and p-channel Symbol Parameter A t 10s Maximum Junction-to-Ambient RJA A Steady-State Maximum Junction-to-Ambient RJL Steady-State Maximum Junction-to-Lead C A t 10s Maximum Junction-to-Ambient RJA A Steady-State Maximum Junction-to-Ambient C RJL Steady-State Maximum Junction-to-Lead Typ n-ch n-ch n-ch p-ch p-ch p-ch Max 45 78 30 38.5 78 28 55 95 40 55 95 40 Units C/W C/W C/W C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOP610 N-Channel+Schottky Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, I D=7.7A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, I D=4A Forward Transconductance VDS=5V, ID=7.7A 10 Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current TJ=125C 1 20 20 29 34 18 0.5 1 3 543 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 142 76 2.1 11 VGS=10V, VDS=15V, I D=7.7A 5.3 1.9 4 4.7 VGS=10V, VDS=15V, RL=1.9, RGEN=3 IF=7.7A, dI/dt=100A/s IF=7.7A, dI/dt=100A/s 4.9 16.2 3.5 15.7 7.9 7 10 22 7 20 10 3 15 7 630 24 35 42 2 Min 30 2 50 125 10 3 Typ Max Units V A A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. RJL and RJC are equivalent terms referring to thermal resistance from junction to drain lead. D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. F. Rev 0: October 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOP610 N-CH+SCHOTTKY TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 25 4V 20 ID (A) 5V 4.5V 20 16 12 VDS=5V 15 3.5V 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics ID(A) 8 125C 4 VGS=3V 0 0 0.5 1 1.5 2 2.5 3 25C 3.5 4 4.5 VGS (Volts) Figure 2: Transfer Characteristics 40 Normalized On-Resistance 35 RDS(ON) (m) 30 25 20 15 10 0 5 10 15 20 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V VGS=4.5V 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0 25 50 75 100 125 150 175 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=4A VGS=10V ID=7.7A 70 1.0E+01 ID=7.7A 60 1.0E+00 RDS(ON) (m) 125C 40 30 20 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1.0E-03 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body diode characteristics IS Amps 50 125C 1.0E-01 25C 1.0E-02 Alpha & Omega Semiconductor, Ltd. AOP610 N-CH+SCHOTTKY TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge characteristics VDS=15V ID=7.7A Capacitance (pF) 1000 900 800 700 600 500 400 300 200 100 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Crss Coss Ciss f=1MHz VGS=0V 100 RDS(ON) limited 10 ID (Amps) 1ms 10ms 0.1s 1 1s 10s DC 0.1 0.1 1 VDS (Volts) 10 TJ(Max)=150C TA=25C 100s 10s Power W 20 TJ(Max)=150C TA=25C 15 10 5 100 0 0.001 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=55C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse T 100 1000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AOP610 P-Channel Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, I D=-6.2A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, I D=4A Forward Transconductance VDS=-5V, ID=-6.2A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1 30 30.5 43 47 12.5 -0.77 -1 3 1040 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 179 134 5 16.8 VGS=-10V, VDS=-15V, I D=-6.2A 8.7 3.4 5 9 VGS=-10V, VDS=-15V, RL=2.5, RGEN=3 IF=-6.2A, dI/dt=100A/s IF=-6.2A, dI/dt=100A/s 5.7 22.7 10.2 21.7 13.6 12 11 30 20 27 18 10 22 12 1250 37 52 60 -1.8 Min -30 -1 -5 10 -3 Typ Max Units V A A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge 2 A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in JA A any given application depends on the user'sthe user's specific board design. The current ratingon based 10sthe t 10s thermal resistance rating. specific board design. The current rating is based is the t on thermal resistance rating. value in any a given application depends on B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. RJL and RJC are equivalent terms referring to JA JL thermalstatic characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. D. The resistance from junction to drain lead. D. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz.duty cyclein a still air environment with T =25C. The SOA E. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, Copper, 0.5% max. A E. These tests are performed rating. device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve curve provides a single pulse with the provides a single pulse rating. F. Rev 0: October 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOP610 P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V 25 20 -ID (A) 15 10 VGS=-3V 5 -2.5V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 90 Normalized On-Resistance 80 70 RDS(ON) (m) 60 50 40 30 20 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 1.0E-01 70 RDS(ON) (m) 60 125C 50 40 30 20 10 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics -IS (A) 1.0E-02 1.0E-03 1.0E-04 25C 125C ID=-6.2A 1.0E+01 1.0E+00 VGS=-10V VGS=-4.5V 1.60 VGS=-10V ID=-6.2A VGS=-4.5V ID=-4A 0 0 1 2 3 4 5 6 -VGS(Volts) Figure 2: Transfer Characteristics 5 125C 25C -6V -5V -4V -4.5V 20 25 VDS=-5V -3.5V -ID(A) 15 10 1.40 1.20 1.00 0.80 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature Alpha & Omega Semiconductor, Ltd. AOP610 P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 -VGS (Volts) VDS=-15V ID=-6.2A Capacitance (pF) 1500 1250 Ciss 1000 750 500 250 0 0 4 8 12 16 20 0 5 10 15 20 25 30 -Qg (nC) Figure 7: Gate-Charge Characteristics -VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss 6 4 2 0 100.0 TJ(Max)=150C, TA=25C RDS(ON) limited 0.1s 1.0 10s 100s 1ms 10ms 1s 10s 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 40 TJ(Max)=150C TA=25C 30 Power (W) -ID (Amps) 10.0 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=55C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 100 1000 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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